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| (R) STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 9NA60 STH9NA60F I s s s s s s s V DSS 600 V 600 V R DS(on) < 0.8 < 0.8 ID 9.5 A 6.4 A TYPICAL RDS(on) = 0.69 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 1 2 3 2 1 3 ISOWATT218 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ST W9NA60 V DS V DGR V GS ID ID I DM (*) P tot V ISO Ts tg Tj Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Un it STH9NA60F I 600 600 30 V V V 9.5 6 38 160 1.28 4000 A A A W W /o C V o o 6.4 4 38 70 0.56 -65 to 150 150 C C (*) Pulse width limited by safe operating area October 1998 1/10 STW9NA60-STH9NA60FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.78 30 0.1 300 ISOWATT 218 1.78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 9.5 450 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 600 25 250 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 30 V T c = 100 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Con ditions ID = 250 A ID = 4.5 A 9 Min. 2.25 Typ. 3 0.69 Max. 3.75 0.8 Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D = 4.5A V GS = 0 Min. 5 Typ. 8.3 1800 230 65 2350 300 85 Max. Unit S pF pF pF 2/10 STW9NA60-STH9NA60FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Con ditions V DD = 300 V I D = 4.5 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 480 V I D = 9 A VGS = 10 V R G = 47 (see test circuit, figure 5) V DD = 480 V ID = 9 A VGS = 10 V Min. Typ. 21 32 180 Max. 30 45 Unit ns ns A/s Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge 75 11 36 100 nC nC nC SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 480 V I D = 9 A R G = 4.7 VGS = 10 V (see test circuit, figure 5) Min. Typ. 16 18 26 Max. 23 25 35 Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 9.5 A V GS = 0 660 12 36 I SD = 9.5 A di/dt = 100 A/s T j = 150 o C V DD = 100 V (see test circuit, figure 5) Test Con ditions Min. Typ. Max. 9.5 38 1.6 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/10 STW9NA60-STH9NA60FI Thermal Impedance for TO-247 Thermal Impedance for ISOWATT218 Derating Curve for TO-247 Derating Curve for ISOWATT218 Output Characteristics Transfer Characteristics 4/10 STW9NA60-STH9NA60FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STW9NA60-STH9NA60FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STW9NA60-STH9NA60FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STW9NA60-STH9NA60FI TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 8/10 STW9NA60-STH9NA60FI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 9/10 STW9NA60-STH9NA60FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 10/10 |
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